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Cambridge Nanotech Savannah TM200 ALD

Contact: Dr. Raluca Gearba
Email:
Location: FNT 4.106

Equipment Type:

Cleanroom Instrumentation

Nano and Micro Fabrication

Instrument Capabilities

The Cambridge Nanotech Savannah TM200 is an atomic layer deposition (ALD) system designed to deposit thin, highly conformal films with precise thickness control. The system is well suited for applications including high-k dielectrics, passivation layers, barrier coatings, and transparent conductive oxides.

System Characteristics

  • Deposition temperature: 100–250 °C (low- to mid-temperature range)
  • Wafer capacity: Accommodates wafers up to 6 inches
  • Carrier gas: N₂ (nitrogen)

Available Precursors

The following precursors are currently available for use in the system:

  • Trimethylaluminum (TMA): Used for deposition of Al₂O₃ (aluminum oxide)
  • Tetrakis(methylamino)hafnium (TDMAH): Used for deposition of HfO₂ (hafnium oxide)
  • Water (H₂O): Used as the reactant/co-reactant for oxide deposition

Fees and Policies

  • UT Users: $35/hour
  • Higher Education/State Agencies (Assisted): $92/hour
  • Corporate/External Users (Assisted): $94/hour
  • Higher Education/State Agencies (Unassisted): $64/hour
  • Corporate/External Users (Unassisted): $65/hour

A cleanroom entry fee will be charged in addition to the cleanroom facility usage fee.

  • UT Users $6
  • Higher Education/State Agencies: $10
  • Corporate/External Users: $10

Traning

Please contact Dr. Raluca Gearba and/or James Smitherman to schedule a training session.